2sc1383.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1383DESCRIPTIONLow Collector Saturation VoltageComplement to Type 2SA683100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification and driveramplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBOV Collector-Emitter Voltage 25 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 1 ACI Collector Current-Peak 1.5 ACMCollector Power DissipationP 1 WC@T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Transistor 2SC1383ELECTRICAL CHARACTERISTICST =25 u

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