2sc1413a.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1413ADESCRIPTIONHigh Collector-base breakdown voltage:1500VLow saturation voltage@5ALarge area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the horizontal output stage inpower-transformer-less television receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 500 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 5 ACCollector Power Dissipation50@ T =25CP WCCollector Power Dissipation20@ T =25aT Junction Temperature 230 JT Storage Temperature Range -45~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN