2sc1419.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1419DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBOV Collector-Emitter Voltage 50 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 2 ACTotal Power DissipationP 20 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 6.25 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Si