2sc1431.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1431DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 110 VCBOV Collector-Emitter Voltage 110 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 2 ACCollector Power DissipationP 23 WCT Junction Temperature -65~200 JT Storage Temperature Range -65~200 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 7.6 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1431