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2sc1447.pdf datasheet:

2sc14472sc1447

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1447DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBOV Collector-Emitter Voltage 300 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 0.15 ACTotal Power DissipationP 20 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 6.25 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductori

 

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