2sc1449.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1449DESCRIPTIONHigh Collector Current I = 2.0ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collector-Emitter Voltage 35 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 2.0 ACCollector Power Dissipation1@ T =25CP WCCollector Power Dissipation10@ T =25aT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc