2sc1450.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1450DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 150 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 0.4 ACCollector Power DissipationP 20 WC@ T =25CT Junction Temperature -65~150 JT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 6.25 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Tran

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