2sc1454.pdf datasheet:

2SC1454 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-3ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 40 A Collector Dissipation (Tc=25 PC 50 W Junction Temperature Tj 150 Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25) Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= 300V , IE=0 100 A Emitter Cutoff Current IEBO VEB= 7V , IC=0 100 A DC Current Gain hFE1 VCE= 5V , IC=1A 20 Collector- Emitter Saturation Voltage VCE(sat) IC=3A , IB=0.3A 1.0 V Current Gain Bandwidth Product fT VCE= 5V , IC=0.5A 8 MHZWing Shing Computer Components Co., (H.K.)Ltd. T