2sc1472.pdf datasheet:

2SC1472(K)Silicon NPN Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92 (1)321. Emitter12. Collector3. Base3212SC1472 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector peak current iC(peak) 500 mACollector power dissipation PC 500 mWJunction temperature Tj 150 CStorage temperature Tstg 55 to +150 C22SC1472 (K)Electrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to emitter breakdown V(BR)CEO 30 V IC = 1 mA, RBE = voltageCollector cutoff current ICBO 100 nA VCB = 30 V, IE = 0Emitter cutoff current IEBO 100 nA VEB = 10 V, IC = 0DC current transfer ratio hFE1*1 2000 100000