2sc2768.pdf datasheet:

isc Silicon NPN Power Transistor 2SC2768DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 200 VCEOV Collector-Emitter Voltage 200 VCEO(SUS)V Emitter-Base voltage 7 VEBOI Collector Current-Continuous 6 ACI Base Current-Continuous 1.5 ABCollector Power DissipationP 40 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junc