2sc2791.pdf datasheet:

isc Silicon NPN Power Transistor 2SC2791DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC converter applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 5 ACI Base Current-Continuous 3 ABCollector Power DissipationP 100 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC2791ELECTRICA