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2sc3439.pdf datasheet:

2sc34392sc3439

SMD Type TransistorsNPN Transistors2SC34391.70 0.1 Features High hFE : hFE=400 to 1800 High collector current Low collector to emitter saturation voltage0.42 0.10.46 0.1 High collector dissipation Pc=500mW Small package for mounting1.Base Complementary to 2SA13692.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1.5A Peak Collector Current ICM 3 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100uA IE= 0 30 Collector- emitter breakdo

 

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