2sc3527.pdf datasheet:
isc Silicon NPN Power Transistor 2SC3527DESCRIPTIONLow Collector Saturation VoltageHigh Collector CurrentGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base voltage 7 VEBOI Collector Current-Continuous 15 ACI Collector Current-Peak 25 ACMI Base Current-Continuous 6 ABCollector Power Dissipation100@ T =25CP WCCollector Power Dissipation3@ T =25aT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transis
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