Todos los transistores

 

2sc3527.pdf datasheet:

2sc35272sc3527

isc Silicon NPN Power Transistor 2SC3527DESCRIPTIONLow Collector Saturation VoltageHigh Collector CurrentGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and high voltageswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base voltage 7 VEBOI Collector Current-Continuous 15 ACI Collector Current-Peak 25 ACMI Base Current-Continuous 6 ABCollector Power Dissipation100@ T =25CP WCCollector Power Dissipation3@ T =25aT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transis

 

Keywords - ALL TRANSISTORS DATASHEET

 2sc3527.pdf Design, MOSFET, Power

 2sc3527.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc3527.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.