2sc4205.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4205DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 5 ACI Collector Current-Peak 7 ACMCollector Power Dissipation1.5@T =25aP WCCollector Power Dissipation40@T =25CJunction Temperature 150 TJStorage Temperature -55~150 Tstg1isc Websitewww.iscsemi.cn isc & iscsemi is registered trademark