2sc4207.pdf datasheet:

2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~700 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 5 VCollector current IC 150 mABase current IB 30 mAPC JEDEC Collector power dissipation 300 mW(Note 1)JEITA Junction temperature Tj 125 CTOSHIBA 2-3L1AStorage temperature range Tstg -55~125 CWeight: 0.014 g (typ.) Note: Using continuously under heavy loads (e.g. the application of