2sc4225.pdf datasheet:

DATA SHEETSILICON TRANSISTOR2SC4225MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4225 is an NPN silicon epitaxial transistor designed for lowin millimetersnoise amplifier at VHF through UHF band.2.1 0.1It has large dynamic range and good current characteristics.1.25 0.1FEATURES2 Low Noise and High GainNF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz31S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz(reference value)MarkingABSOLUTE MAXIMUM RATINGS (TA = 25 C)Collector to Base Voltage VCB0 25 VCollector to Emitter Voltage VCE0 12 VEmitter to Base Voltage VEB0 3.0 VCollector Current IC 70 mATotal Power Dissipation PT 160 mWJunction Temperature Tj 150 CStorage Temperature Tstg 65 to +150 CPIN CONNECTIONS1. Emitter2. Base