2sc4235.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4235DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 3 ACI Collector Current-Peak 6 ACMI Base Current-Continuous 1 ABI Base Current-Peak 2 ABMTotal Power DissipationP 80 WT@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.56 /Wth j-c1

Keywords - ALL TRANSISTORS DATASHEET

 2sc4235.pdf Design, MOSFET, Power

 2sc4235.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4235.pdf Database, Innovation, IC, Electricity