2sc4250.pdf datasheet:

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IBB Base Current-Continuous 25 mA Collector Power Dissipation PC @TC=25 0.1 W TJ Junction Temperature 125 Storage Temperature Range -55~125 Tstgisc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNITICBO C