2sc4264.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4264DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF ~VHF RF amplifier, localoscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 11 VCEOV Emitter-Base Voltage 3.0 VEBOI Collector Current-Continuous 50 mACCollector Power DissipationP 0.1 WC@T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4264ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TYP. MA

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