2sc4297.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4297DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 10 VEBOI Collector Current-Continuous 12 ACI Collector Current-Peak 24 ACMI Base Current-Continuous 4 ABCollector Power DissipationP 75 WC@T =25CT Junction Temperature 150 JStorage Temperature -55~150 Tstg1isc Website isc & iscsemi is registered trademarkwww.iscsemi.cnINCHANGE Semiconductorisc Silicon NPN