2sc4327.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4327DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ (I = 5A, I = 0.3A)CE(sat) C BComplement to Type 2SA1643100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBOV Collector-Emitter Voltage 35 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 7 ACCollector Power DissipationP 25 WC@T =25CT Junction Temperature 150 JStorage Temperature -55~150 Tstg1isc Websitewww.iscsemi.cn isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power T

Keywords - ALL TRANSISTORS DATASHEET

 2sc4327.pdf Design, MOSFET, Power

 2sc4327.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4327.pdf Database, Innovation, IC, Electricity