2sc4508.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4508DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 10 ACI Base Current-Continuous 2 ABCollector Power DissipationP 40 WC@T =25CJunction Temperature 150 TJT Storage Temperature -55~150 stgisc websitewww.iscsemi.com 1 isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4508ELECTRICAL CHARACTERISTICSTj=25 unless o