2sc6093.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6093DESCRIPTIONLow saturation voltageBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage color display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current- Continuous 5 ACI Base Current- Continuous 2 ABI Collector Current-Pulse 12 ACPCollector Power Dissipation2@ T =25aP WCCollector Power Dissipation25@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkIN