2sc6097.pdf datasheet:

Ordering number : ENA0412 2SC6097NPN Epitaxial Planar Silicon Transistor2SC6097High-Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 100 VCollector-to-Emitter Voltage VCES 100 VCollector-to-Emitter Voltage VCEO 60 VEmitter-to-Base Voltage VEBO 6.5 VCollector Current IC 3 ACollector Current (Pulse) ICP 5 ABase Current IB 600 mA0.8 WCollector Dissipation PCTc=25C15 WJunction Temperature Tj 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at

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