2sc6099.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6099DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 6.5 VEBOI Collector Current-Continuous 2 ACI Collector Current-Peak 3 ACMCollector Power Dissipation15@ T =25CP WCCollector Power Dissipation0.8@T =25aT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconducto