2sd1044.pdf datasheet:

isc Silicon NPN Darlington Power Transistor 2SD1044DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 100 VCERV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 6 ACI Base Current- Continuous 3 ABCollector Power DissipationP 60 WC@T =25CT Junction Temperature 150 jStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon