2sd1046.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1046DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB816Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor LF power amplifier, 50W output large power switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 120 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 8 ACI Collector Current-Pulse 12 ACPCollector Power DissipationP 80 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -40~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademark