2sd110.pdf datasheet:

isc Silicon NPN Power Transistor 2SD110DESCRIPTIONVHigh Power Dissipation-: P = 100W@T = 25C CHigh Current Capability-: I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , power switching ,DC-DCconverter and regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 130 VCBOV Collector-Emitter Voltage 110 VCEOV Emitter-Base Voltage 10 VEBOI Collector Current-Continuous 10 ACI Emitter Current-Continuous 10 AEI Base Current-Continuous 3 ABP Collector Power Dissipation @T =25 100 WC CT Junction Temperature 150 JStorage Temperature -65~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SD110ELECTRICAL CHARA