2sd1126.pdf datasheet:

2SD1126(K)Silicon NPN Triple DiffusedApplicationPower switchingOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 1.5 k 130 23(Typ) (Typ)32SD1126(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 10 ACollector peak current IC(peak) 15 ACollector power dissipation PC*1 50 WJunction temperature Tj 150 CStorage temperature Tstg 55 to +150 CC to E diode forward current ID 10 ANote: 1. Value at TC = 25 C.Electrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to emitter breakdown V(BR)CEO 120 V IC = 25 mA, RBE = voltageEmitter to base breakdown V(BR)EBO 7 V IE = 200 mA, IC = 0voltageCollector cutoff