2sd1127.pdf datasheet:

isc Silicon NPN Darlington Power Transistor 2SD1127DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage 120 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 10 ACI Collector Current-Peak 15 ACPCollector Power DissipationP 50 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Darlington Power Transistor 2SD1127ELECTRICAL CHARACTE