2sd1133.pdf datasheet:

isc Silicon NPN Power Transistor 2SD1133DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 70 VCBOV Collector-Emitter Voltage 50 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 4 ACI Collector Current-Peak 8 ACMTotal Power DissipationP 40 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -45~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SD1133ELECTRICAL CHARA