2sd1160.pdf datasheet:

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications High DC current gain Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B Built-in free wheel diode Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 6 VDC IC 2Collector current A Pulse ICP 4Diode forward surge current (t = 1 s) IFP 1 ATa = 25C 1 Collector power PC W JEDEC dissipation Tc = 25C 10 JEITA Junction temperature Tj 150 CTOSHIBA 2-7B1AStorage temperature range Tstg -55 to 150 C Weight: 0.36 g (typ.) Equivalent Circuit COLLECTOR BASE 800 EMITTER 1 2002-07-23 2SD1160 Electrical Characteristics (Ta =