2sd1211.pdf datasheet:

Transistor2SD1211Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB9875.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver-stage of a low-frequency and 40 to 60Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 V+0.2 +0.20.450.1 0.450.1Emitter to base voltage VEBO 5 V 1.27 1.271:EmitterPeak collector current ICP 1 A2:Collector1 2 33:BaseCollector current IC 0.5 AEIAJ:SC51Collector power dissipation PC 1 WTO92L PackageJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector to emitter voltage VCEO IC = 0.1