2sd1265.pdf datasheet:

2SD1265 NPN EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIERVERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150 Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25) Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= 150V , IE=0 10 A Emitter Cutoff Current IEBO VEB= 5V , IC=0 10 A DC Current Gain hFE1 VCE= 3.0V ,IC=-1.0A 70 240 Collector- Emitter Saturation Voltage VCE(sat) IC=3A ,IB=-0.3mA 1.0 V Current Gain Bandwidth Product fT VCE= -10V ,IC=-0.5A 60 MHZWing Shing Computer Compo