2sd1296.pdf datasheet:

isc Silicon NPN Darlington Power Transistor 2SD1296DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 15A, V = 2VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 100 VCEOV Collector-Emitter Voltage 80 VCEO(SUS)V Emitter-Base Voltage 8 VEBOI Collector Current-Continuous 15 ACI Collector Current-Peak 30 ACMI Base Current- Continuous 1.5 ABCollector Power Dissipation100@T =25CP WCCollector Power Dissipation3.0@T =25aT Junc