2sd1366.pdf datasheet:

2SD1366Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1366Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5VCollector current IC 1ACollector peak current iC(peak)*1 1.5 ACollector power dissipation PC*2 1WJunction temperature Tj 150 CStorage temperature Tstg 55 to +150 CNotes: 1. PW 10 ms, Duty cycle 20%.2. Value on the alumina ceramic board (12.5 20 0.7 mm)Electrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to base breakdown V(BR)CBO 25 V IC = 10 A, IE = 0voltageCollector to emitter breakdown V(BR)CEO 20 V IC = 1 mA, RBE = voltageEmitter to