2sd1407.pdf datasheet:

isc Silicon NPN Power Transistor 2SD1407DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB1016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 5 ACI Base Current-Continuous 0.5 ABCollector Power DissipationP 25 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SD1407ELECTRICAL CHARACTERIS