2sd1407a.pdf datasheet:

2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 VCollector-emitter voltage VCEO 100 VEmitter-base voltage VEBO 5 VCollector current IC 5 ABase current IB 0.5 ACollector power dissipation PC 30 W(Tc = 25C) JEDEC Junction temperature Tj 150 CJEITA Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1ANote: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrea