2sd1609.pdf datasheet:

UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1TO-1261:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNITCollector-Base Voltage BVCBO 160 VCollector-Emitter Voltage BVCEO 160 VEmitter-Base Voltage BVEBO 5 VCollector Current Ic 100 mA Total Power Dissipation (T =25C) Ptot 1.25 WaJunction Temperature Tj 150 C Storage Temperature Tstg -50 150 C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITCollector-Base Voltage BVCBO I =10A 160 VCCollector-Emitter Voltage BVCEO I =1mA 160 VCEmitter-Base Voltage BVEBO I =10A 5 VECollector Cut-off Current ICBO VCB=140V 10 A DC Current Gain hFE1 VCE=5V, Ic=10mA 60 320 hFE2