2sd895.pdf datasheet:

isc Silicon NPN Power Transistor 2SD895DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB775Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 35W audio frequency output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 85 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 6 ACI Collector Current-Pulse 10 ACPCollector Power DissipationP 60 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -40~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SD895ELEC