2sj166.pdf datasheet:

SMD Type MOSFETP-Channel MOSFET2SJ166SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 50 (VGS =-4V)+0.11.9-0.1 Comp;ementary to 2SK11321. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -50V Gate-Source Voltage VGS 7 Continuous Drain Current ID -100mA Pulsed Drain Current (Note.1) IDM -200 Power Dissipation PD 200 mW Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -50 V Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V -10 uA