2sj210-3.pdf datasheet:
SMD Type MOSFETP-Channel MOSFET2SJ210SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-60V ID =-200m A RDS(ON) 10 (VGS =-10V) 1 2+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 15 (VGS =-4V)+0.11.9-0.21. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20 Continuous Drain Current ID -200mA Pulsed Drain Current (Note.1) IDM -400 Power Dissipation PD 200 mW Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -60 V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -1 uA G
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