2sj412.pdf datasheet:

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -100 VDrain-gate voltage (RGS = 20 k) VDGR -100 VGate-source voltage VGSS 20 VDC (Note 1) ID -16 JEDEC Drain current A Pulse (Note 1) IDP -64 JEITA Drain power dissipation (Tc = 25C) PD 60 WTOSHIBA 2-10S1BSingle pulse avalanche energy EAS 292 mJWeight: 1.5 g (typ.) (Note 2) Avalanche current IAR -16 AR