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2sj413.pdf datasheet:

2sj4132sj413

Ordering number:ENN5366AP-Channel Silicon MOSFET2SJ413Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2076B Low-voltage drive.[2SJ413] Micaless package facilitating mounting.16.05.63.43.12.82.0 2.01.00.61 2 31 : Gate2 : Drain3 : Source5.45 5.45 SANYO : TO-3PMLSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 50 ADrain Current (Pulse) IDP PW 10 s, duty cycle 1% 200 A3.0 WAllowable Power Dissipation PDTc=25C 70 WChannel Temperature Tch 150 CStorage Temperature Tstg 55 to +150CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxDrain

 

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 2sj413.pdf Design, MOSFET, Power

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