2sj419.pdf datasheet:

Ordering number:EN5313AP-Channel Silicon MOSFET2SJ419Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2116 2.5V drive.[2SJ419]8 51 : Source2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 4 ADrain Current (Pulse) IDP PW 10 s, duty cycle 1% 32 AAllowable Power Dissipation PD Mounted on ceramic board (1200mm2 0.8mm) 2.0 WChannel Temperature Tch 150 CStorage Temperature Tstg 55 to +150 CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-

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