2sj438.pdf datasheet:

2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.16 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode : V = -0.8~-2.0 V (V = -10 V, I = -1 mA) th DS DMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -60 VDrain-gate voltage (RGS = 20 k) VDGR -60 V Gate-source voltage VGSS 20 VDC (Note 1) ID -5 ADrain current Pulse (Note 1) IDP -20 AJEDEC Drain power dissipation (Tc = 25C) PD 25 WJEITA SC-67Single pulse avalanche energy EAS 273 mJ(Note 2)TOSHIBA 2-10R1BAvalanche current IAR -5 AWeight: 1.9 g (typ.) Repetitive