2sj450.pdf datasheet:

2SJ450Silicon P-Channel MOS FETADE-208-3811st. EditionApplicationHigh speed power switchingFeatures Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.OutlineUPAK1234D1. GateG2. Drain3. Source4. DrainSThis datasheet has been downloaded from http://www.digchip.com at this page2SJ450Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 1 ADrain peak current ID(pulse)*1 2 ADrain peak current IDR 1 AChannel dissipation Pch*2 1WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes: 1. PW 100 s, duty cycle 10%2. When using aluminium ceramic board (12.5 20 70 mm)22SJ450Electrical Characteristics (Ta = 25C)Item Symbol Min