2sj451.pdf datasheet:

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG2. Gate13. Drain2SNote: Marking is ZK. Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage VDSS 20 VGate to source voltage VGSS 20 VDrain current ID 0.2 ADrain peak current ID (pulse) Note 1 0.4 AChannel dissipation Pch 150 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. PW 10 s, duty cycle 1% REJ03G864-0400 Rev.4.00 Sep 07, 2007 Page 1 of 6 2SJ451 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit