2sj461-3.pdf datasheet:

SMD Type MOSFETP-Channel MOSFET2SJ461SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-50V1 2 ID =-0.1 A+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 50 (VGS =-4V)1.9 -0.2 RDS(ON) 100 (VGS =-2.5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -50V Gate-Source Voltage VGS 7 Continuous Drain Current ID -0.1A Pulsed Drain Current Note.1) IDM -0.2 Power Dissipation PD 0.2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10 ms, duty cycle 1% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -50 V Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V -1 uA