2sj466.pdf datasheet:

Ordering number:ENN5491BP-Channel Silicon MOSFET2SJ466Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2128 4V drive.[2SJ466] Enables simplified fabrication, high-density mount-8.27.8ing, and miniaturization in end products due to the6.20.63surface mountable package.1 20.31.0 1.00.62.54 2.545.087.810.06.01 : Gate2 : Source3 : DrainSANYO : ZPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 35 ADrain Current (Pulse) IDP PW 10 s, duty cycle 1% 140 AAllowable Power Dissipation PD Tc=25C 50 WChannel Temperature Tch 150CStorage Temperature Tstg 55 to +150CElectrical Cha